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The DTC114TCAT116 is a single NPN digital transistor from the ROHM DTx series, housed in an SOT-23-3 (SST3) surface-mount package. It integrates a bias resistor network to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. The typical input resistance (R1) is 10 kOhms. The device features a transition frequency of 250 MHz and a power dissipation rating of 350 mW. DC current gain (hFE) is specified at a minimum of 30 at 5 mA and 5 V. The maximum operating temperature reaches +150 C, with an emitter-base voltage (VEBO) of 5 V.
Verify component authenticity through authorized distribution channels or direct manufacturer confirmation. Check datasheet revisions for updates on electrical characteristics and mechanical dimensions. Ensure compliance with RoHS directives and confirm moisture sensitivity level requirements for storage and reflow soldering processes prior to assembly.
Select this component when a compact NPN solution with integrated base biasing is required for space-constrained designs. The 10 kOhm input resistance suits standard logic levels. Consider the 50 V rating for low-voltage signal switching. Verify thermal management capabilities given the 350 mW dissipation limit in the small SOT-23 package.
This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with internal resistor networks. The 'DTC' prefix denotes an NPN configuration with a single base resistor (R1). The 'A' suffix typically indicates specific binning or revision, while 'T116' specifies the tape and reel packaging format for automated surface-mount assembly.
Publicly confirmed substitutes include DTC114TCA and DTC114GU3T106. Note that DTC114GU3T106 uses an SOT-323 package with lower power dissipation (200 mW), requiring footprint and thermal verification. DTC114TCA shares the same electrical profile and SOT-23 form factor.