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The DTC114TE3TL is a single NPN digital transistor from the ROHM DTC114T series, housed in an SOT-416 (EMT3) surface-mount package. It integrates a built-in bias resistor with a typical value of 10 kΩ to simplify circuit design. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Electrical characteristics include a minimum DC current gain of 100 at 1 mA and a transition frequency of 250 MHz. Power dissipation is rated at 150 mW, with a maximum junction temperature of 150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact package type and taping specifications. Confirm RoHS compliance status and long-term supply availability directly with the supplier before finalizing procurement plans.
Select this component when a compact NPN digital transistor with a 10 kΩ base resistor is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current rating. Verify that the SOT-416 footprint matches the PCB layout requirements.
This part belongs to the DTC114T series of Bias Resistor Built-in Transistors (BRBTs). The series includes various packages such as SOT-723, SOT-323, and SOT-346. The TE3 variant specifically denotes the SOT-416 package configuration.
Check for other members of the DTC114T series with different package codes if space constraints change. Complementary PNP options exist in the DTA114T series. Verify pinout compatibility before substituting with generic pre-biased transistors.
The built-in bias resistor allows the transistor to be used as an inverter without connecting external input resistors, simplifying the circuit design.
The maximum power dissipation is 150 mW when mounted on a reference land at an ambient temperature of 25°C.
No, the standard DTC114T series is not recommended for use in automotive equipment unless specifically designated otherwise.