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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A EMT3F
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：EMT3F (SOT-416FL)
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Overview
The DTC114TEBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, designed for surface-mount applications in the EMT3F (SOT-416FL) package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a minimum DC current gain (hFE) of 100 at 1 mA and 5 V, with a maximum transition frequency of 250 MHz. Power dissipation is rated at 150 mW, and it supports operating temperatures up to +150°C.
Feature Summary
- Integrates bias resistors to enable inverter circuit configuration without external input components
- Provides high current gain for efficient signal switching in low-power applications
- Utilizes compact SMD packaging suitable for automated surface-mount assembly
Applications
- General-purpose logic level shifting and interface circuits
- Driver stages for small-signal switching applications
- Biasing networks in portable electronic devices
Procurement Notes
Verify the specific suffix BTL against the official ROHM datasheet to confirm tape-and-reel packaging specifications. Ensure compatibility with existing PCB footprints for the EMT3F package. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Selection Notes
Select this component when a single NPN digital transistor with integrated biasing is required in an EMT3F package. Compare hFE characteristics and power dissipation limits against alternative packages like SOT-23 if space constraints vary. Confirm that the 50 V rating meets the system's voltage headroom requirements.
Part Context
This part belongs to the ROHM DTC114 series of pre-biased transistors. The DTC114 family offers various resistor configurations and package options. The TEBTL variant specifically denotes the NPN type with built-in base resistor in the EMT3F form factor, distinct from other series members with different resistance values or polarities.
Replacement Considerations
Potential substitutes include DTC114TETL and DTC114TE3, which share similar electrical characteristics but may differ in packaging details or manufacturer lifecycle status. Verify pinout compatibility and thermal performance before substitution.
