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The DTC114TET1 is an NPN silicon Bias Resistor Transistor (BRT) from onsemi, housed in a SC-75/SOT-416 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor and an open base-emitter path. Key electrical ratings include a collector-emitter voltage of 50 Vdc, a continuous collector current of 100 mAdc, and a total device dissipation of 200 mW at 25°C on an FR-4 board. The junction temperature range spans from -55°C to +150°C. The internal circuit features a 10 kOhm input resistor (R1) with no base-emitter resistor (R2), providing a DC current gain (hFE) minimum of 160.
Verify the specific ordering suffix when sourcing this component. The 'G' suffix indicates a lead-free package configuration, whereas the base part number without the suffix may represent standard specifications. Confirm the exact marking code '94' matches the intended revision and packaging type required for your assembly process.
Select this component when a design requires an NPN digital transistor with a 10 kOhm base resistor and no base-emitter shunt resistor. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA current constraints. Verify that the SC-75 package dimensions fit the available footprint and that the thermal resistance characteristics meet the power dissipation requirements of the target environment.
This device belongs to the DTC114EET1 series of Bias Resistor Transistors manufactured by onsemi. The series includes various combinations of internal resistors to suit different biasing needs. The DTC114TET1 specifically utilizes a 10 kOhm series resistor with an open emitter-base connection, distinguishing it from variants like the DTC114EET1 which includes parallel resistors.
DTC114EET1