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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC114TET1G is an NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a single silicon transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a collector-emitter voltage rating of 50 V and a continuous collector current of 100 mA. Typical internal resistance values are 10 kOhms for the base resistor and 47 kOhms for the emitter-base resistor. Power dissipation is rated at 260 mW, with an operating temperature range from -55 °C to +150 °C. The component is housed in an SOT-323 package.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
- Simplifies circuit design by eliminating the need for external input resistors.
- Reduces printed circuit board space and overall component count.
Applications
- General-purpose switching applications
- Driver circuits for relays and solenoids
- Logic level translation interfaces
Procurement Notes
Verify the specific suffix ET1G against the manufacturer's latest datasheet to confirm packaging type and automotive qualification status. Ensure the ordering information matches the required RoHS compliance and halogen-free specifications. Cross-reference the part number with official distributor catalogs to confirm availability and lead times before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. Verify that the 10 kOhm base resistance aligns with the driving source impedance. Confirm that the 50 V collector-emitter voltage exceeds the maximum circuit voltage. Check thermal requirements against the 260 mW power dissipation limit in the target application environment.
Part Context
This component belongs to the DTC114 series of digital transistors produced by onsemi. These devices are designed to simplify circuit design by integrating bias resistors directly with the transistor die. The series offers various configurations and packages to suit different space and performance constraints in consumer and industrial electronics.
Replacement Considerations
Compatible substitutes include DTC114TM3T5G and DTC114EM3T5G. Verify pinout compatibility and electrical parameters such as hFE and saturation voltage before substitution.
