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The DTC114TSATP is an NPN digital transistor with built-in resistors manufactured by ROHM Semiconductor. It features a VCEO of 50V, a continuous collector current (IC) of 100mA, and a power dissipation (PD) of 150mW at 25°C. The device includes a single base resistor (R1) of 10kΩ. Key electrical characteristics include a DC current transfer ratio (hFE) minimum of 100 at IC=1mA and VCE=5V, and a transition frequency (fT) of 250MHz. The component operates within a junction temperature range of -55°C to +150°C and utilizes the SPT package.
Verify the specific suffix 'TP' against official ROHM documentation to confirm packaging details such as tape and reel specifications or minimum order quantities. Ensure the selected variant matches the required SPT package dimensions and lead configurations for your PCB layout constraints.
Select this component when a compact NPN digital transistor with integrated biasing is required for low-power switching applications. Consider the 150mW power dissipation limit and the 10kΩ input resistance when designing the driving circuit interface. Verify thermal performance under maximum operating conditions.
This part belongs to the DTC114 series of digital transistors from ROHM Semiconductor. The series offers various packages including EMT3, UMT3, and SPT. The DTC114TSATP specifically utilizes the SPT package, distinguishing it from other variants like the DTC114TE or DTC114TUA which use different form factors.
Direct pin-compatible replacements within the same family include DTC114TKA (SMT3 package) and DTC114TM (VMT3 package). Verify that the alternative package dimensions and electrical parameters meet the design requirements before substitution.