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The DTC114TUAT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features a typical input resistance of 10 kOhms and supports a collector continuous current of 100 mA with a maximum collector-emitter voltage (VCEO) of 50 V. The device operates up to a maximum frequency of 250 MHz and dissipates up to 200 mW of power. It maintains a minimum DC collector/base gain (hfe) of 100 at 1 mA and 5 V, with an emitter-base voltage (VEBO) rating of 5 V. The component functions within a maximum operating temperature range of +150 C.
Verify the supply status carefully before procurement as this component is marked Not Recommended for New Designs (NRND). Confirm that the specific ordering suffix AT106 matches the required reel packaging quantity of 3000 units. Ensure compatibility with existing inventory strategies given the potential phase-out status.
Select this part when a compact SOT-323 package is required for NPN digital switching with a 10 kOhm base resistor. Compare against the DTC114TU3T106 if leak absorption features are needed instead of standard configuration. Verify that the 50 V VCEO rating meets the circuit's voltage requirements rather than lower-rated alternatives.
This component belongs to the DTC114TUA series of bias resistor built-in transistors from ROHM Semiconductor. It shares pinout and package dimensions with related variants like the DTC114TU3, facilitating potential footprint compatibility across different functional configurations within the same product family.
Public documentation identifies DTC114TU3T106 and DTC114TU3HZGT106 as similar parts with the same pinout and package. These serve as direct physical replacements but differ in internal resistor configurations or leakage characteristics.