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Product Detailed Parameters
- Description：NPN, SOT-323, R1R2 LEAK
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：24 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：UMT3
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Overview
The DTC114WU3HZGT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features built-in bias resistors with typical values of R1 at 10 kOhms and R2 at 4.7 kOhms, resulting in a resistor ratio of 0.47. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hfe) of 24 at 10 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. It operates within a temperature range up to +150°C and meets AEC-Q101 automotive standards.
Feature Summary
- Integrates bias resistors to simplify circuit design by eliminating external input resistors for inverter configurations.
- Designed as a leak absorption type suitable for automotive applications requiring high reliability.
- Complies with AEC-Q101 automotive grade standards for enhanced durability.
Applications
- Inverter circuits
- Interface circuits
- Driver circuits
Procurement Notes
Verify the complete part number including the suffix GT106 to ensure correct taping packaging quantity of 3000 units. Confirm RoHS compliance status through official manufacturer documentation before integration. Check for any specific handling requirements associated with the SOT-323 package during assembly processes.
Selection Notes
Select this component when a compact NPN digital transistor with specific internal resistor ratios is required. Ensure the 50 V collector-emitter voltage and 100 mA current ratings align with the target circuit loads. Verify that the 10 kOhm input resistance matches the driving source impedance requirements for the intended application.
Part Context
This part belongs to the DTC114 series of digital transistors from ROHM Semiconductor. It shares the same pinout and package dimensions as other variants in the family but differs in internal resistor values and specific electrical characteristics tailored for different switching speeds and load conditions.
Replacement Considerations
The DTC114TU3HZG is listed as a similar level replacement with the same pinout and package. Verify compatibility regarding the specific resistor ratios and hfe specifications before substitution.
