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The DTC114WU3T106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323 (UMT3) surface-mount package. It integrates bias resistors with R1 at 10 kOhms and R2 at 4.7 kOhms, yielding a typical resistance ratio of 0.47. The device supports a collector continuous current of 100 mA and a maximum operating frequency of 250 MHz. Key electrical limits include a VCEO of 300 mV, VEBO of 3 V, and power dissipation of 200 mW. Minimum DC current gain (hfe) is specified as 24 at 10 mA and 5 V. It operates up to +150°C and features leak absorption characteristics.
Verify the specific suffix T106 against the manufacturer's latest datasheet to confirm tape-and-reel quantities and RoHS compliance status. Ensure the ordering part number matches the required voltage and resistance specifications exactly. Cross-reference the component marking code on the physical device with official documentation to prevent counterfeit substitution during assembly.
Select this component when a single NPN digital transistor with 10 kOhm base resistance and 4.7 kOhm emitter-base resistance is required. It is appropriate for applications needing 100 mA collector current and 250 MHz switching capability within an SOT-323 footprint. Consider alternative polarity or resistance values if the circuit demands PNP configuration or different bias ratios.
This part belongs to the ROHM DTC114 series of Bias Resistor Built-in Transistors. It shares the SOT-323 package form factor with other variants like DTC114GU3T106 but differs in internal resistance ratios and voltage ratings. The series is designed to simplify digital switching designs by combining a transistor and resistors into a single package.
DTC114WU3 is listed as an alias for this component. Verify compatibility with DTC114YU3T106 only if the higher hfe and different R2 value are acceptable for the specific circuit design.