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The DTC114YET1 is an NPN silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-75/SOT-416 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features R1 = 10 kΩ and R2 = 47 kΩ. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 Vdc, a collector current (IC) of 100 mAdc, and a total device dissipation of 200 mW on an FR-4 board at minimum pad size. The junction temperature range spans from -55°C to +150°C.
Verify the specific ordering suffix to confirm package type and shipping configuration. Confirm that the component meets RoHS requirements if lead-free status is mandatory for the assembly process. Check the manufacturer's documentation for tape and reel specifications regarding part orientation and tape dimensions before placing orders.
Select this component when circuit design requires simplification by reducing board space and component count. It is suitable for low power surface mount applications where external input resistors can be eliminated. Ensure the required DC current gain and saturation voltage characteristics align with the specific load conditions of the target application.
This device belongs to the DTC114EET1 series of NPN silicon Bias Resistor Transistors. The series includes variants with different internal resistor values, such as equal resistors (DTC114EET1) or other ratios. All devices in this family share the same SC-75/SOT-416 package style and fundamental transistor structure, differing primarily in the integrated resistance values.
Compatible substitutes within the same series include DTC114EET1, which features equal 10 kΩ resistors instead of the 10 kΩ/47 kΩ ratio found in the DTC114YET1. Designers must verify that the alternative resistor values meet the specific biasing requirements of the circuit before substitution.