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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT723
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：260 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：SOT-723
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Overview
The DTC114YM3T5G is a single NPN digital transistor with built-in resistors (BRT) manufactured by onsemi. It integrates a silicon NPN transistor with a monolithic bias resistor network in an SOT-723-3 surface-mount package. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance (R1) of 10 kOhms and a typical emitter-base resistance (R2) of 10 kOhms. Power dissipation is rated at 260 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network for simplified circuit design.
- Provides high DC current gain (hFE) ranging from 80 to 140 for reliable switching performance.
- Utilizes an SOT-723-3 surface-mount package suitable for automated assembly and space-constrained applications.
Applications
- General-purpose switching circuits
- Driver circuits for logic interfaces
- Level shifting applications
Procurement Notes
Verify the specific ordering suffix T5G to confirm the reel packaging format and tape-and-reel quantity. Ensure the component meets RoHS compliance requirements for your manufacturing process. Cross-reference the manufacturer part number DTC114YM3T5G with official onsemi documentation to validate authenticity and revision status before procurement.
Selection Notes
Select this component when a single NPN switch with integrated biasing is required. The 10 kOhm input resistance matches standard logic outputs. Consider the SOT-723-3 package dimensions for PCB layout constraints. Verify that the 50 V voltage rating and 100 mA current capacity exceed the maximum load requirements of the target application.
Part Context
This component belongs to the DTC114YM3 series of digital transistors from onsemi. It is part of a broader family of BRT devices designed to replace discrete resistor-transistor networks. The YM3 designation typically indicates specific internal resistor values and package type within the product line.
Replacement Considerations
Compatible substitutes include DTC114EM3T5G (NPN, R1=10k, R2=10k) and DTA114YM3T5G (PNP, R1=10k, R2=10k). Verify polarity and resistor ratios match the original circuit design before substitution.
FAQ
What are the internal resistor values for the DTC114YM3T5G?
The device has a typical input resistance (R1) of 10 kOhms and a typical emitter-base resistance (R2) of 10 kOhms.
What is the maximum power dissipation of this component?
The maximum power dissipation (Pd) is 260 mW.
Is this component available in a through-hole package?
No, the DTC114YM3T5G is exclusively available in the SOT-723-3 surface-mount package.
