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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A EMT3
- Series：DTA113E
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTC115EE3TL is an NPN digital transistor from the ROHM DTC115E series, housed in a SOT-416 (EMT3) surface-mount package. It integrates biasing resistors with R1 and R2 both at 100 kΩ. Key electrical parameters include a maximum collector current of 100 mA, a supply voltage rating of 50 V, and a transition frequency of 250 MHz. The device features a minimum DC current gain of 82 and a typical output voltage of 100 mV. Power dissipation is rated at 150 mW, with a maximum junction temperature of 150°C.
Feature Summary
- Built-in biasing resistors enable inverter circuit configuration without external input components.
- Simplifies circuit design by requiring only on/off condition settings for operation.
Applications
- Inverter circuits
- Interface applications
- Driver circuits
Procurement Notes
Verify the specific suffix 'TL' against the manufacturer's datasheet to confirm packaging details such as tape width and reel size. Confirm RoHS compliance status directly with the supplier or official documentation before procurement. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability.
Selection Notes
Select this component for designs requiring a single NPN digital transistor with equal biasing resistors. Verify that the 100 kΩ internal resistance values align with the target logic interface levels. Consider the SOT-416 footprint constraints during PCB layout planning.
Part Context
This part belongs to the DTC115E series of bias resistor built-in transistors. It serves as the NPN counterpart to the DTA115E series PNP devices. The EE3 variant specifically denotes the SOT-416 package configuration within the broader product family.
Replacement Considerations
Direct substitutes include the DDTC115TE-7-F from Diodes Incorporated. Alternative options may include PDTC115TU variants from Nexperia, though package differences should be evaluated.
FAQ
What are the values of the built-in biasing resistors?
Both the base resistor (R1) and emitter-base resistor (R2) are 100 kΩ.
Is this component suitable for automotive applications?
No, ROHM specifies that this standard-grade product is not recommended for use in automotive equipment.
What is the maximum power dissipation?
The maximum power dissipation is 150 mW when mounted on a reference land.
