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The DTC115EEBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates with a supply voltage of up to 50 V and supports a continuous collector current of 0.1 A. The device incorporates an input resistance (R1) of 100 kΩ and an emitter-base resistance (R2) of 100 kΩ, providing a typical DC current gain (hFE) of 82 at 5 mA and 5 V. Packaged in the compact SOT-416FL (EMT3F) surface-mount format, it dissipates 150 mW and functions within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized ROHM distributors or certified suppliers. Confirm RoHS compliance status via official documentation before integration. Ensure storage conditions remain within specified limits to maintain reliability. Check for obsolescence notices as this may be a legacy part number. Validate packaging specifications against production requirements.
Select this component when space constraints necessitate the SOT-416FL footprint. Choose based on the specific 100 kΩ resistor ratio requirement for R1 and R2. Consider the 50 V collector-emitter voltage rating for low-voltage digital systems. Evaluate thermal management needs given the 150 mW power dissipation limit in enclosed environments.
This part belongs to the DTC115EE series of digital transistors from ROHM. It shares functional characteristics with other variants like DTC115EETL but differs in physical packaging. The EEB suffix specifically denotes the SOT-416FL form factor. This series represents standard-grade discrete semiconductor solutions for basic digital switching tasks.
Direct substitutes include DTC115EETL, which offers identical electrical performance in the SOT-416 package. Verify pinout compatibility during replacement to ensure correct orientation. Cross-reference datasheets for minor variations in hFE ranges or thermal resistance values between manufacturers.