DTC115EET1

DTC115EET1

$0.04
  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-

SKU:13ef86a79eeb Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):100 kOhms
  • Resistor - Emitter Base (R2):100 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416

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DTC115EET1

Overview

The DTC115EET1 is an NPN silicon Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration replaces individual discrete components to reduce system cost and board space. The device is housed in the SC-75/SOT-416 package designed for low power surface mount applications. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, a collector current (IC) of 100 mAdc, and total device dissipation of 200 mW on an FR-4 board at minimum pad size. The internal resistors R1 and R2 are both 100 kOhms.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network containing a series base resistor and a base-emitter resistor.
  • Eliminates the need for external discrete biasing components, reducing overall component count.
  • SC-75/SOT-416 package features modified gull-wing leads that absorb thermal stress during soldering to protect the die.

Applications

  • Level shifting circuits connecting 12 or 24 Volt systems to logic levels
  • Open collector inverter configurations for signal inversion
  • Unregulated current source implementations

Procurement Notes

Verify the specific ordering suffix when sourcing this component. The standard part number DTC115EET1 may be supplied in lead-free packaging designated by the suffix 'G' (DTC115EET1G). Confirm the exact marking code '8N' and shipping configuration, typically provided in 3000-unit tape and reel quantities, matches the requirements of the procurement specification before finalizing orders.

Selection Notes

Select this component when a compact solution is required to replace a discrete transistor and its associated bias resistors. Ensure the application operates within the 50 Vdc collector-emitter voltage limit and 100 mA collector current rating. Verify that the 100 kOhm internal resistor values provide appropriate biasing for the intended logic interface or switching load without exceeding the thermal dissipation limits of the SOT-416 package.

Part Context

This device belongs to the DTC114EET1 Series, which includes various NPN BRTs with different internal resistor combinations. It shares the same SC-75/SOT-416 physical footprint and pinout as other members of this family, such as the DTC114EET1 and DTC124EET1, allowing for potential mechanical compatibility while differing in electrical characteristics due to varying internal resistance ratios.

Replacement Considerations

Direct replacements within the same series include the DTC115EET1G, which denotes the lead-free variant. Cross-manufacturer equivalents should be verified against the specific 100 kOhm/100 kOhm resistor ratio and the 50 V/100 mA ratings to ensure functional parity in existing designs.

DTC115EET1DTC115EET1
$0.04
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