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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC115EET1G is an NPN digital transistor manufactured by onsemi, belonging to the DTC115EE series. It integrates a single NPN bipolar junction transistor with built-in biasing resistors in a compact SC-75 (SOT-416) surface-mount package. The device features a collector-emitter breakdown voltage of 50 V and a continuous collector current rating of 100 mA. Internal resistor values are typically 100 kΩ for both the base input resistor (R1) and the emitter-base resistor (R2). The component supports a maximum power dissipation of 200 mW and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Integrates NPN transistor with dual 100 kΩ biasing resistors to simplify circuit design
- Compact SC-75 (SOT-416) surface-mount package for space-constrained applications
- High thermal stability with extended operating temperature range up to 150°C
Applications
- General-purpose switching and logic interface circuits
- Driver stages for low-current loads
- Level shifting between different logic families
Procurement Notes
Verify the specific ordering suffix ET1G to confirm the tape-and-reel packaging format and quantity. Confirm RoHS compliance status through official documentation before integration. Check current supply status as availability may vary by region. Ensure the SC-75 footprint matches the target PCB layout requirements.
Selection Notes
Select this component when an NPN configuration with equal 100 kΩ internal resistors is required. Compare against the PNP counterpart DTA115EET1G if complementary polarity is needed. Consider the 200 mW power dissipation limit for thermal management in dense layouts. Verify that the 50 V voltage rating meets the system's maximum signal levels.
Part Context
This part is part of onsemi's broader portfolio of pre-biased transistors designed to reduce external component count. It serves as a direct replacement for similar digital transistors from other manufacturers offering identical pinouts and electrical characteristics. The SC-75 package is widely used in portable electronics and consumer devices requiring minimal board space.
Replacement Considerations
The DTC115EUAT106 is listed as a similar level replacement with the same pinout and package. Verify compatibility with DTC113EET1G if lower resistance values are acceptable. Cross-reference with DTC115EM3T5G for SOT-723 package alternatives.
