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The DTC115EM3T5G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-723 surface-mount package. It integrates internal biasing resistors with typical values of 100 kOhms for both base and emitter connections, maintaining a 1:1 resistance ratio. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a minimum DC current gain (hFE) ranging from 80 to 150 and a power dissipation capacity of 260 mW. It operates within a temperature range of -55°C to +150°C.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status via official documentation. Ensure ordering suffixes match specific tape-and-reel quantities. Cross-reference datasheet revisions to validate parameter consistency before integration into production designs.
Select this NPN variant when complementary PNP switching is required alongside existing PNP components. Verify that the 100 kOhm input resistance aligns with the driving source impedance. Ensure the SOT-723 footprint matches the PCB layout constraints. Confirm that the 50 V breakdown voltage exceeds the maximum circuit voltage under all operating conditions.
This component belongs to the DTC115EM3 series of pre-biased transistors. It serves as the NPN counterpart to the DTA115EM3T5G PNP digital transistor. Both devices share identical resistor configurations and packaging, facilitating balanced push-pull or differential circuit designs within the same product family.
The DTC115EUA is documented as a similar level replacement with the same pinout and package. Verify compatibility regarding supply status, as the DTC115EUA may be marked as not recommended for new designs.