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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V VMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：20 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：VMT3
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Overview
The DTC115EMT2L is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-723 (VMT3) surface-mount package. It integrates bias resistors with a ratio of R1=R2=4.7kΩ to simplify circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of 50V, a continuous collector current (IC) of 100mA, and a power dissipation (PD) of 150mW. The device features a minimum DC current gain (hFE) of 20 at 5mA/5V, operates up to a maximum frequency of 250MHz, and supports a junction temperature range from -55°C to +150°C.
Feature Summary
- Integrates built-in bias resistors (R1=R2=4.7kΩ) to eliminate external input resistor requirements for inverter configurations.
- Provides simplified operation where only on/off conditions need to be set, reducing component count and design complexity.
- Offers high-frequency performance suitable for interface and driver applications within automotive-grade reliability standards.
Applications
- Automotive interface circuits
- Driver circuits
- Inverter applications
Procurement Notes
Verify the specific suffix T2L against official ROHM documentation to confirm packaging details and tape-and-reel quantities. Ensure compliance with AEC-Q101 automotive grade requirements if used in vehicle systems. Cross-reference the part number with authorized distributors to avoid counterfeit components. Confirm RoHS status and long-term supply availability before finalizing procurement plans.
Selection Notes
Select this component when a compact NPN digital transistor with low-value bias resistors (4.7kΩ) is required. It is suitable for applications needing high switching speeds up to 250MHz and robust thermal performance up to 150°C. Compare with complementary PNP types like the DTA143E series for push-pull configurations. Ensure the 100mA current rating meets load requirements.
Part Context
This part belongs to the ROHM Digital Transistor family, specifically designed as a Bias Resistor Built-in Transistor (BRBT). It shares functional similarities with other SOT-723 packaged devices but differs in internal resistor values and gain characteristics. The DTC115EMT2L serves as a standard-level product distinct from higher-reliability automotive variants like the DTC115EMHZGT2L.
Replacement Considerations
Direct substitutes may include other ROHM NPN digital transistors in SOT-723 packages with similar 4.7kΩ resistor ratios, such as the DTC143E series. Verify pinout compatibility and electrical parameters before substitution.
FAQ
What is the internal resistor configuration for the DTC115EMT2L?
The device features built-in bias resistors with a ratio of R1 = R2 = 4.7kΩ.
Is the DTC115EMT2L qualified for automotive applications?
Yes, it is a high-reliability product qualified to AEC-Q101 standards for automotive use.
What is the maximum operating junction temperature?
The maximum operating temperature is +150°C.
