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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A UMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：100 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：82 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：UMT3
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Overview
The DTC115EU3T106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features a built-in bias resistor network with a typical input resistance of 100 kOhms and a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 82 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. The emitter-base voltage (VEBO) is rated at 3 V, with a saturation voltage of approximately 300 mV.
Feature Summary
- Integrates a potential divider type bias resistor network to eliminate external resistors for inverter circuit construction.
- Designed for high-speed switching applications with a maximum operating frequency of 250 MHz.
- Utilizes a compact SOT-323-3 (UMT3) surface-mount package suitable for space-constrained designs.
Applications
- Inverter circuits requiring integrated biasing without external resistors.
- General-purpose switching applications in portable electronic devices.
- Signal processing interfaces in consumer electronics.
Procurement Notes
Verify the specific suffix T106 to confirm the tape and reel packaging quantity of 3000 units. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure the ordering part number matches the exact pinout and electrical specifications required for the target design.
Selection Notes
Select this component when a single NPN configuration with a 100 kOhm base resistor is required. The 50 V collector-emitter voltage rating suits low-voltage logic interfacing. Consider the 200 mW power dissipation limit for thermal management in dense PCB layouts.
Part Context
This part belongs to the ROHM DTC115EUA series of Bias Resistor Built-in Transistors (BRBTs). It shares core electrical characteristics with variants like DTC115GU3T106 but differs in packaging or specific manufacturing lot identifiers. The 'EU3' designation typically correlates with the SOT-323 form factor within the product family.
Replacement Considerations
Direct substitutes include DTC115GU3T106 from ROHM. Cross-manufacturer alternatives such as Diodes Incorporated DDTC115TE-7-F or Nexperia PDTC115TU may be considered if electrical parameters align with the application requirements.
