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The DTC115GKAT146 is a single NPN digital transistor manufactured by ROHM Semiconductor, designed for surface-mount applications. It features an integrated bias resistor network with a typical input resistance of 100 kOhms and a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 82 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. The emitter-base voltage (VEBO) is specified at 5 V. The component is housed in an SMT-3 package, equivalent to SC-70 or SOT-323, facilitating compact circuit board layouts.
Verify the specific suffix 'T146' against the manufacturer's latest datasheet to confirm the exact reel quantity and tape specifications, as packaging details can vary. Confirm RoHS compliance status directly from the official documentation prior to integration. Ensure that the supply chain source provides authentic components with traceable lot codes to maintain quality standards in production environments.
Select this component when a compact NPN switch with integrated biasing is required for high-frequency applications up to 250 MHz. It is suitable for designs needing a 50 V voltage rating and 100 mA current capacity within a minimal footprint. Consider the 200 mW power dissipation limit and thermal constraints during PCB layout planning to ensure reliable operation under load conditions.
This part belongs to the DTC115 series of pre-biased transistors from ROHM Semiconductor. The series offers various configurations and packages to meet different design requirements. The DTC115GKAT146 specifically utilizes the SMT-3 package, providing a balance between performance and size. This family is widely used in applications requiring simplified biasing networks and reliable switching performance in small form factors.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing designs by comparing pinout, electrical ratings, and package dimensions with alternative pre-biased transistors from other manufacturers if direct substitution is necessary.