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The DTC115GU3HZGT106 is an NPN digital transistor manufactured by ROHM Semiconductor, housed in a SOT-323 (UMT3) surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 10 kOhms and an emitter-base resistance of 4.7 kOhms. It operates with a maximum power dissipation of 200 mW and supports a maximum operating temperature of +150°C. The DC current gain (hFE) is specified at a minimum of 82 under standard test conditions.
Verify the specific suffix 'HZG' against official ROHM documentation to confirm lead absorption characteristics and exact pinout compatibility. Ensure the ordering code matches the required tape-and-reel quantity. Cross-reference the manufacturer part number with authorized distributors to confirm current production status and RoHS compliance details before finalizing procurement.
Select this component when a single NPN digital transistor with integrated 10 kOhm base resistance is required. Compare the 50 V rating and 100 mA current limit against load requirements. Consider the SOT-323 footprint constraints and thermal dissipation limits relative to the application's ambient temperature and duty cycle specifications.
This part belongs to the ROHM DTC115 series of NPN digital transistors. It shares functional similarities with other variants like the DTC115GU3 but includes specific packaging or lead-absorption modifications indicated by the suffix. It serves as a direct replacement for discrete resistor-transistor networks in low-power digital logic interfaces.
The DTC115EU3T106 is listed as a similar level part with the same pinout and package. Verify if the internal resistor values and leakage characteristics match the original design requirements before substitution.