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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：100 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 100µA, 1mA
- Current - Collector Cutoff (Max)：500nA (ICBO)
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTC115TETL is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring an integrated bias resistor network within an EMT3 (SOT-416) surface-mount package. It provides a collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device includes a base input resistor (R1) of 100 kOhms with a minimum DC current gain (hFE) of 100 at 1 mA and 5 V. It operates up to a transition frequency of 250 MHz with a power dissipation rating of 150 mW.
Feature Summary
- Integrates a pre-biased resistor network to simplify circuit design and reduce component count.
- Provides high-speed switching capabilities suitable for interface driving applications.
- Offers low saturation voltage for efficient signal transmission.
Applications
- Interface circuits between logic gates and peripheral devices.
- Inverter circuits in consumer electronics.
- Driver stages for small-signal switching loads.
Procurement Notes
Verify the specific suffix 'TL' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications. Confirm RoHS compliance status and check for any obsolescence notices, as some variants in this series may be marked as not recommended for new designs.
Selection Notes
Select this component when a compact SMD solution is required for NPN switching with built-in biasing. Ensure the 100 kOhm input resistance aligns with the driving source impedance. Verify that the 150 mW power dissipation limit accommodates the thermal conditions of the target application.
Part Context
This part belongs to the DTC115 series of digital transistors from ROHM. These components are designed to replace discrete resistor-transistor combinations, offering space savings on printed circuit boards while maintaining consistent electrical characteristics across production batches.
Replacement Considerations
Direct substitutes include DDTC115TE-7-F from Diodes Incorporated. Alternative options from other manufacturers should match the NPN polarity, 50V VCEO, 100mA IC, and 100kOhm R1 specifications.
