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The DTC115TMT2L is a single NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates a bias resistor network with an NPN bipolar junction transistor in a compact surface-mount package. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. It operates at a maximum frequency of 250 MHz with a power dissipation of 150 mW. The emitter-base voltage is rated at 5 V, ensuring robust performance in digital switching applications requiring integrated biasing solutions.
Verify the specific suffix 'TMT2L' against official ROHM documentation to confirm the exact tape-and-reel packaging quantity and pin configuration. Ensure compatibility with standard SMD reflow profiles. Cross-reference the datasheet for thermal derating curves relevant to your operating environment. Confirm that the 5V emitter-base rating meets your system's input voltage constraints before finalizing procurement.
Select this component when a single NPN digital transistor with integrated biasing is required. The 50V rating and 100mA current limit define its operational boundaries. Consider the 150mW power dissipation for thermal management. The VMT3 package size dictates PCB layout constraints. Compare against other ROHM series if higher current or different resistance ratios are needed.
This part belongs to ROHM's DTC115 series of pre-biased transistors. These components combine a BJT with internal resistors to replace discrete resistor-transistor networks. The TMT2L suffix indicates a specific surface-mount variant optimized for high-volume manufacturing. This series is designed to reduce board space and simplify assembly compared to discrete solutions.
The maximum collector-emitter voltage (Vceo) is 50 V.
The DTC115TMT2L is an NPN pre-biased digital transistor.