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The DTC115TU3T106 is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring a built-in bias resistor (R1 alone type). It is housed in an SOT-323-3 surface-mount package. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a typical input resistance of 100 kOhms. The device supports a maximum operating frequency of 250 MHz and has a power dissipation rating of 200 mW. The DC current gain (hFE) is specified as a minimum of 100 at 1 mA and 5 V. The emitter-base voltage (VEBO) is rated at 5 V, with a maximum operating temperature of +150 C.
Verify the specific suffix T106 to confirm the tape-and-reel packaging quantity of 3000 units. Confirm RoHS compliance status through official documentation before integration. Ensure the selected variant matches the required R1 value and polarity for the target application design.
Select this component when a single NPN transistor with a 100 kOhm base resistor is required. Compare against DTC114 variants if a 10 kOhm resistor is needed instead. Verify that the 50 V voltage rating and 100 mA current capacity meet the load requirements of the specific circuit design.
This part belongs to the DTC115 series of bias resistor built-in transistors from ROHM. It shares characteristics with other SOT-323 packaged devices like DTC115TCAT116 but differs in package type and specific resistor configuration. The series is designed for general-purpose digital switching tasks.
DTC115TCAT116 offers similar electrical performance in an SOT-23-3 package. DTA115TUAT106 serves as the PNP counterpart within the same family. Verify pinout compatibility and thermal characteristics when substituting these alternatives.