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The DTC123E is a PNP digital transistor with built-in biasing resistors, manufactured by Rohm Semiconductor and distributed by onsemi. It features an EMT3 surface-mount package (SC-75/SOT-416). Key electrical parameters include a collector-emitter breakdown voltage of 50 V, a maximum collector current of 100 mA, and a power dissipation of 150 mW. The internal resistors R1 and R2 are both 2.2 kOhms. The device has a transition frequency of 250 MHz, a DC current gain (hFE) of at least 20 at Ic=20mA/Vce=5V, and a saturation voltage of 300 mV at Ib=500µA/Ic=10mA.
Verify the specific ordering suffix when sourcing, as variations such as DTC123EETL indicate tape-and-reel packaging while others may denote cut tape. Confirm that the supplier source aligns with the original manufacturer Rohm Semiconductor to ensure authenticity. Check for automotive-grade variants like DTC123EE3HZG if AEC-Q101 compliance is required for the target application environment.
Select this component for PNP switching applications requiring integrated base and emitter resistors. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Compare against NPN equivalents like the DTA123 series if polarity inversion is needed. Verify thermal management capabilities given the 150 mW power dissipation limit in the small EMT3 package.
The DTC123E belongs to the DTA123/DTC123 family of pre-biased transistors. These devices combine a single bipolar junction transistor with two fixed resistors to replace multiple discrete components. This integration reduces board space and assembly time compared to using separate BJTs and resistors.
The DTC123EU3HZG is a recommended replacement with identical pinout, package (UMT3/SOT-323), and specifications. Other alternatives include DTC123EMFHA, though it uses a different SOT-723 package. Verify resistor values and polarity match before substitution.