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The DTC123ECAT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-23-3 (SST3) surface-mount package. It integrates biasing resistors with typical values of R1 = 2.2 kΩ and R2 = 2.2 kΩ to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PD) of 200 mW. The device features a minimum DC current gain (hFE) of 20 at IC = 20 mA and VCE = 5 V, with a transition frequency (fT) of 250 MHz. It operates within a junction temperature range up to +150°C.
Verify the specific suffix AT116 against official ROHM documentation to confirm tape-and-reel specifications and manufacturing origin. Ensure compatibility with RoHS3 standards if required by the target assembly process. Cross-reference datasheet revisions to confirm parameter stability before finalizing component selection.
Select this component when a pre-biased NPN solution is required for low-current switching tasks. The 2.2 kΩ resistor configuration suits standard logic levels. Verify that the 200 mW power dissipation rating meets thermal requirements for the intended enclosure. Confirm that the 50 V voltage rating provides adequate margin for the operating environment.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistors to replace multiple discrete components. The DTC123ECAT116 specifically utilizes the SST3 package code, indicating a small-outline transistor form factor designed for automated surface-mount assembly processes.
DTC123EKAT146 is listed as a parameter equivalent. Verify pinout compatibility and exact resistor tolerances before substitution. Other potential replacements may exist but require individual datasheet comparison for electrical equivalence.