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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC123EET1 is an NPN silicon Bias Resistor Transistor (BRT) from the DTC114EET1 series, manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features a collector-base voltage (VCBO) and collector-emitter voltage (VCEO) of 50 Vdc, with a maximum collector current (IC) of 100 mAdc. The integrated resistors are specified at nominal values of 2.2 kΩ each. It is housed in the SC-75/SOT-416 surface mount package.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components
- Reduces board space and component count by combining active and passive elements
- SC-75/SOT-416 package designed for low power surface mount applications
- Modified gull-winged leads absorb thermal stress during wave or reflow soldering
Applications
- Level shifting between 12 or 24 volt circuits and logic levels
- Open collector inverter configurations for signal inversion
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix to confirm package type and environmental compliance. The standard DTC123EET1 designation corresponds to the SC-75/SOT-416 package. Confirm availability of Pb-free variants if required by assembly specifications. Cross-reference the marking code '8H' to ensure correct device identification upon receipt.
Selection Notes
Select this component when a compact NPN switching solution with fixed biasing is required. The 2.2 kΩ internal resistors define the input impedance and drive requirements. Ensure the application voltage does not exceed the 50 Vdc breakdown ratings. Consider the thermal resistance characteristics for high-density PCB layouts where heat dissipation may be limited.
Part Context
This part belongs to the DTC114EET1 series of Bias Resistor Transistors. The series includes various combinations of R1 and R2 values to suit different circuit driving conditions. The DTC123EET1 specifically utilizes equal 2.2 kΩ resistors for both the base series and base-emitter paths, offering a balanced bias configuration within the SC-75 form factor.
Replacement Considerations
Direct substitutes within the same series include other DTC1xxxEET1 variants with different resistor values. For identical electrical characteristics but Pb-free packaging, verify the DTC123EET1G designation. Ensure any replacement maintains the SC-75/SOT-416 footprint and pinout compatibility.
