ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
Download product information
Overview
The DTC123EET1G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an NPN silicon transistor integrated with a monolithic bias resistor network. It replaces discrete components to simplify circuit design and reduce board space. The device operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a typical base resistor (R1) of 2.2 kOhms and a typical emitter resistor (R2) of 47 kOhms. It is housed in the SC-75/SOT-416 surface-mount package, suitable for low-power applications.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network consisting of series base and base-emitter resistors.
- Reduces component count and board space by eliminating individual external biasing components.
- Designed for surface mount applications with packages compatible with wave or reflow soldering processes.
Applications
- General-purpose switching circuits requiring simplified biasing networks.
- Low-power surface mount applications where board space is constrained.
- Digital logic interface circuits replacing discrete resistor-transistor combinations.
Procurement Notes
Verify the specific suffix 'T1G' against official datasheets to confirm RoHS compliance and lead-free status. Confirm the package type matches the SC-75/SOT-416 outline. Ensure the resistor ratio aligns with design requirements before procurement.
Selection Notes
Select this component when a compact NPN BRT solution is needed with a 2.2k/47k resistor ratio. Verify that the 50V VCEO and 100mA Ic ratings meet the circuit's operational limits. Compare against alternative packages like SOT-723 if smaller footprint is required.
Part Context
This part belongs to the DTC123 series of digital transistors from onsemi. It is functionally similar to other BRTs but distinguished by its specific resistor values and SC-75/SOT-416 packaging. It serves as a direct replacement for discrete biasing networks in consumer and industrial electronics.
Replacement Considerations
Direct substitutes may include DTC123EM3T5G or DTC123JM3T5G, though package differences (SOT-723 vs SOT-416) require mechanical verification. Ensure equivalent R1/R2 ratios and electrical ratings are maintained during substitution.
