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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT723
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：2.2 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：8 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：260 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：SOT-723
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Overview
The DTC123EM3T5G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-723 surface-mount package. It integrates a bias resistor network to replace discrete components. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features typical base resistance (R1) and emitter resistance (R2) values of 2.2 kOhms each, resulting in a resistor ratio of 1. Minimum DC current gain (hFE) is specified as 8 at 5 mA collector current and 10 V. Power dissipation is rated at 260 mW, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Integrates NPN transistor with dual internal bias resistors for simplified circuit design
- Optimized for low-voltage switching applications with high reliability
- Compact SOT-723 footprint suitable for space-constrained surface-mount assemblies
Applications
- Interface driving circuits
- Inverter gate drivers
- Logic level shifting between different voltage domains
Procurement Notes
Verify the complete part number including suffixes such as T5G for reel packaging configuration. Confirm RoHS compliance status through official manufacturer documentation prior to integration. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage during soldering processes.
Selection Notes
Select this component when a single NPN switch with integrated base pull-down and emitter feedback resistors is required. The 2.2 kOhm resistor values provide standard biasing for general-purpose logic interfaces. Consider thermal constraints given the 260 mW power dissipation limit in small packages.
Part Context
This part belongs to the DTC123 series of pre-biased transistors. The 'E' suffix typically denotes specific resistor ratios or configurations within the family. It serves as a direct replacement for discrete NPN transistor and resistor networks, reducing board space and assembly complexity in consumer and industrial electronics.
Replacement Considerations
Compatible substitutes include DTC123J variants for different resistor ratios and DTA123EM3T5G for PNP polarity requirements. Verify pinout compatibility and electrical ratings match before substitution.
