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The DTC123JET1G is an NPN silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-75/SOT-416 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 Vdc. Electrical specifications include a DC current gain (hFE) minimum of 8.0 at 5.0 mA and 10 V, and a collector-emitter saturation voltage maximum of 0.25 Vdc at 10 mA. Thermal characteristics specify a total device dissipation of 200 mW on an FR-4 board with minimum pads.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Confirm that the requested part number matches the exact resistor values and electrical parameters required for the target application before finalizing procurement orders.
Select this component when a low-power NPN switching solution with integrated biasing is required. Ensure the R1 value of 2.2 kOhms and R2 value of 47 kOhms align with the input drive requirements. Verify that the thermal dissipation limits are sufficient for the intended operating ambient temperature and PCB pad configuration.
This device belongs to the DTC114EET1 series of Bias Resistor Transistors manufactured by onsemi. The series offers various resistor combinations within the same SC-75/SOT-416 package footprint, allowing designers to standardize on a single package type while adjusting biasing networks for different logic interface needs.
DTC123JET1G