DTC123JET1

DTC123JET1

$0.04
  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-

SKU:6ad38dc14bef Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Bulk
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):47 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416

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DTC123JET1

Overview

The DTC123JET1G is an NPN silicon Bias Resistor Transistor (BRT) from onsemi, housed in the SC-75/SOT-416 surface-mount package. It integrates a single transistor with a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2). The device features a maximum collector current of 100 mA and a collector-emitter voltage rating of 50 Vdc. Electrical specifications include a DC current gain (hFE) minimum of 8.0 at 5.0 mA and 10 V, and a collector-emitter saturation voltage maximum of 0.25 Vdc at 10 mA. Thermal characteristics specify a total device dissipation of 200 mW on an FR-4 board with minimum pads.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components
  • Reduces printed circuit board space and component count for simplified circuit design
  • SC-75/SOT-416 package supports wave or reflow soldering with modified gull-winged leads

Applications

  • Level shifting between 12V/24V circuits and logic levels
  • Open collector inverter configurations
  • Unregulated current source applications

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging type and compliance status. Confirm that the requested part number matches the exact resistor values and electrical parameters required for the target application before finalizing procurement orders.

Selection Notes

Select this component when a low-power NPN switching solution with integrated biasing is required. Ensure the R1 value of 2.2 kOhms and R2 value of 47 kOhms align with the input drive requirements. Verify that the thermal dissipation limits are sufficient for the intended operating ambient temperature and PCB pad configuration.

Part Context

This device belongs to the DTC114EET1 series of Bias Resistor Transistors manufactured by onsemi. The series offers various resistor combinations within the same SC-75/SOT-416 package footprint, allowing designers to standardize on a single package type while adjusting biasing networks for different logic interface needs.

Replacement Considerations

DTC123JET1G

DTC123JET1DTC123JET1
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