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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC123JET1G is an NPN silicon surface-mount digital transistor featuring a monolithic bias resistor network. It integrates a single transistor with two resistors: a series base resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 47 kΩ. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a maximum collector current (IC) of 100 mA, and a power dissipation (PD) of 150 mW. The device operates within a storage temperature range of -55°C to 150°C and is housed in the SC-75/SOT-416 package.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor to replace discrete components.
- Features modified gull-wing leads designed to absorb thermal stress during soldering, eliminating the possibility of die damage.
Applications
- Low power surface mount applications requiring simplified circuit design.
- Inverter circuits configured without connecting external input resistors.
- Automotive and other applications requiring unique site and control change requirements.
Procurement Notes
Verify that the ordering part number includes the 'S' prefix if automotive qualification under AEC-Q101 standards is required for the specific application. Confirm RoHS compliance status as Pb-free packages are available. Ensure the selected variant matches the required pinout and package dimensions for the target PCB layout.
Selection Notes
Select this component when board space reduction and component count minimization are critical design constraints. The integrated bias network simplifies circuit design by eliminating the need for external input resistors. Verify that the 50 V collector-emitter voltage and 100 mA collector current ratings exceed the maximum operating conditions of the target circuit.
Part Context
This component belongs to the Bias Resistor Transistor (BRT) series from onsemi. These devices are engineered to replace a single transistor and its associated external resistor bias network with a single integrated unit. This integration reduces both system cost and physical board space while maintaining reliable performance in surface mount configurations.
Replacement Considerations
Compatible substitutes include DTC123JE and DTC123YE3, which share similar electrical characteristics and pinouts. Verify package compatibility and resistance values before substitution.
