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The DTC123JKAT146 is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors within an SMT3 (SOT-346) surface-mount package. It supports a supply voltage of 50 V and handles a continuous collector current of 100 mA with a maximum power dissipation of 150 mW. The device incorporates a typical input resistance (R1) of 2.2 kOhms and an emitter-base resistance (R2) of 47 kOhms, yielding a resistor ratio of 21. Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 10 mA and 5 V, a transition frequency of 250 MHz, and a collector-emitter saturation voltage of 300 mV under specified conditions.
Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration and quantity per reel. Ensure compliance with RoHS directives and JEITA package standards required for the target manufacturing process. Confirm that the SMT3 footprint matches the PCB land pattern before finalizing procurement orders.
Select this component when a compact NPN solution with integrated base and emitter resistors is required. The 2.2 kOhm input resistance suits standard logic outputs, while the 50 V rating provides adequate headroom for low-voltage systems. Consider the 150 mW power dissipation limit when designing thermal management strategies for dense layouts.
This part belongs to the DTC123 series of digital transistors from ROHM Semiconductor. The series offers various resistor ratios and packages to accommodate different drive requirements. The DTC123JKAT146 specifically utilizes the SMT3 package, distinguishing it from other variants that may use SOT-23 or larger footprints while maintaining similar electrical performance profiles.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameters against alternative components if sourcing constraints require substitution.