DTC123JM3T5G

Overview

The DTC123JM3T5G is a single NPN digital transistor manufactured by onsemi, housed in an SOT-723 surface-mount package. It integrates bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 1. The device supports a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Power dissipation is rated at 260 mW, with a minimum DC current gain (hFE) of 8 to 15. Operating temperatures range from -55°C to +150°C.

Feature Summary

• Integrates NPN transistor with built-in bias resistors for simplified circuit design
• Compact SOT-723 surface-mount packaging suitable for space-constrained applications
• High thermal stability with extended operating temperature range up to 150°C

Applications

• General-purpose switching circuits
• Driver stages for logic interfaces
• Level shifting between different voltage domains

Procurement Notes

Verify the specific suffix 'M3' indicates lead-free compliance and 'T5G' denotes tape-and-reel packaging configuration. Confirm RoHS status through official manufacturer documentation prior to integration. Ensure component authenticity by sourcing from authorized distributors only.

Selection Notes

Select this component when a single NPN switch with integrated base and emitter resistors is required. The 2.2 kOhm input resistance suits standard logic drive levels. Verify that the 50V breakdown voltage and 100mA current capacity meet the target application requirements.

Part Context

This part belongs to the DTC123 series of pre-biased transistors. It shares the same electrical characteristics as the DTC123EM3T5G but differs in packaging or reel specifications. The series provides a compact alternative to discrete resistor-transistor combinations.

Replacement Considerations

The DTC123EM3T5G is a confirmed equivalent part number within the same product family. Verify pinout compatibility and ensure the replacement matches the required packaging format for automated assembly processes.