DTC123JMT2L

Overview

The DTC123JMT2L is a single NPN pre-biased digital transistor manufactured by ROHM Semiconductor. It integrates bias resistors R1 (2.2 kΩ) and R2 (47 kΩ) within a VMT3 (SOT-723) surface-mount package. Key electrical specifications include a collector-emitter breakdown voltage of 50 V, a continuous collector current of 100 mA, and a DC current gain (hFE) minimum of 80 at 10 mA and 5 V. The device features a low saturation voltage of 300 mV at specified currents and operates up to a transition frequency of 250 MHz with a power dissipation rating of 150 mW.

Feature Summary

• Integrated bias resistors eliminate the need for external input components in inverter circuit configurations.
• Compact SMD packaging supports automated surface-mount assembly processes.
• High-speed switching capability suitable for interface and driver applications.

Applications

• Inverter circuits
• Interface logic
• Driver stages

Procurement Notes

Verify the specific suffix against official ROHM documentation to confirm exact tape-and-reel quantities and RoHS compliance status. Confirm that the component meets the required operating temperature range and power dissipation limits for the target application environment before finalizing procurement.

Selection Notes

Select this component when a compact NPN solution with fixed internal biasing is required. Ensure the design accounts for the 2.2 kΩ base resistor value and the 47 kΩ emitter resistor configuration. Verify that the 150 mW thermal limit and 50 V voltage rating align with the system's maximum operating conditions.

Part Context

This part belongs to the DTC123 series of digital transistors from ROHM Semiconductor. It is designed as a direct replacement for discrete resistor-transistor networks, simplifying PCB layout and reducing component count in standard consumer and industrial electronics applications.

Replacement Considerations

Check for compatible alternatives such as the DTC123JE or DTC123YM if package variations are acceptable. Verify pinout compatibility and electrical parameter equivalence before substituting.