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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC123TET1G is a single NPN digital bipolar transistor manufactured by onsemi, featuring integrated base bias resistors for simplified circuit design. It operates with a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device dissipates up to 300 mW of power within an operating temperature range of -55°C to 150°C. Packaged in the surface-mount SOT-416 (SC-75) format with three pins, it ensures a minimum DC current gain of 160 hFE.
Feature Summary
- Integrates base bias resistors to reduce component count and simplify PCB layout
- Provides high DC current gain for reliable switching performance
- Supports wide operating temperature ranges suitable for diverse environments
Applications
- General-purpose switching applications
- Driver circuits for LEDs and relays
- Logic level translation interfaces
Procurement Notes
Verify the manufacturer part number DTC123TET1G against official onsemi documentation to confirm authenticity. Ensure the received components match the specified SOT-416 package dimensions and pin configuration. Check datasheets for updated electrical characteristics and thermal limits before integration into final designs.
Selection Notes
Select this component when a compact NPN switching solution with built-in biasing is required. It is suitable for low-power logic interfacing where space constraints limit discrete resistor usage. Consider the 50V rating and 100mA current capacity to ensure adequate headroom for the specific load requirements.
Part Context
This device belongs to the category of pre-biased digital transistors, which combine a BJT with internal resistors. It serves as a drop-in replacement for discrete resistor-transistor networks, offering improved reliability and reduced assembly time compared to traditional multi-component configurations.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure any alternative maintains identical pinout compatibility and meets or exceeds the 50V voltage and 100mA current specifications.
FAQ
What is the primary function of the internal resistors?
The internal resistors provide base biasing, eliminating the need for external components and simplifying the circuit design.
What is the maximum power dissipation capability?
The device supports a maximum power dissipation of 300 mW under standard operating conditions.
