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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V SOT723
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk,Bulk
- Resistors Included：R1 Only
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：260 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SOT-723
- Supplier Device Package：SOT-723
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Overview
The DTC123TM3T5G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a silicon transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. The device features a typical input resistance of 10 kOhms for both R1 and R2, with a resistor ratio of 1. It operates within a collector-emitter voltage range up to 50 V and supports a continuous collector current of 100 mA. The component is housed in an SOT-723-3 surface-mount package, dissipates up to 260 mW, and functions across a temperature range from -55°C to +150°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
- Simplifies circuit design by eliminating the need for external biasing resistors.
- Reduces printed circuit board space and overall component count.
Applications
- General-purpose switching applications
- Driver circuits for logic interfaces
- Replacement for discrete transistor-resistor networks
Procurement Notes
Verify the specific suffix 'T5G' confirms the tape-and-reel packaging format and lead-free compliance status required for the assembly process. Confirm that the SOT-723 footprint matches the target PCB layout dimensions. Ensure the 10 kOhm internal resistance values align with the driving source capabilities and logic level requirements of the application circuit.
Selection Notes
Select this component when a compact NPN solution with integrated biasing is required. The 10 kOhm resistor configuration suits moderate drive currents. Compare against DTC123EM3T5G if lower resistance values are needed for higher speed or different impedance matching. Verify that the 50 V breakdown voltage meets the system's maximum operating voltage constraints.
Part Context
This part belongs to the DTC123 series of Bias Resistor Transistors from onsemi. The series offers various resistor combinations in small surface-mount packages. The DTC123TM3T5G specifically provides the 10k/10k configuration in the SOT-723 case outline, distinguishing it from other variants like the DTC123E or DTC123J series which offer different resistance ratios.
Replacement Considerations
DTC123EM3T5G (2.2k/2.2k), DTC123JM3T5G (4.7k/4.7k). Verify pinout compatibility and resistance values before substitution.
FAQ
What is the internal resistor configuration for the DTC123TM3T5G?
The device contains a series base resistor (R1) and a base-emitter resistor (R2), both typically valued at 10 kOhms.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 50 V.
Which package type does this component use?
It is available in the SOT-723-3 surface-mount package.
