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The DTC124EEBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an EMT3 (SOT-416) surface-mount package. It integrates biasing resistors with typical values of R1 = 22 kΩ and R2 = 22 kΩ. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V, a continuous collector current (Ic) of 100 mA, and a maximum power dissipation (Pd) of 150 mW. The device features a minimum DC current gain (hFE) of 56 at Ic = 5 mA and Vce = 5 V, with a transition frequency (fT) of 250 MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'TL' corresponds to the tape-and-reel packaging format required for automated assembly processes. Confirm that the EMT3 package dimensions align with the target PCB footprint. Ensure the 50V VCEO rating meets the maximum voltage stress requirements of the intended application environment without derating issues.
Select this component when a compact NPN solution with integrated base and emitter resistors is needed. The 22kΩ/22kΩ resistor ratio suits applications requiring moderate drive currents. Compare against DTC124XEFRATL if higher hFE or different resistance ratios are required. Verify AEC-Q101 qualification if automotive reliability standards apply, as standard versions may differ from automotive-grade variants like DTC124EE3HZG.
This part belongs to ROHM's DTC124 series of pre-biased transistors. It shares the same internal structure and pinout with other variants such as DTC124EUA and DTC124EU3, differing primarily in packaging and specific manufacturing batches. The EMT3 package provides a small form factor suitable for space-constrained designs.
DTC124EU3HZGT106 offers identical electrical characteristics in a SOT-323 package. DTC124XEFRATL provides similar functionality in the same SOT-416 package but with different resistor values (R1=22kΩ, R2=47kΩ). Verify pin compatibility before substitution.