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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC124EET1 is an NPN silicon Bias Resistor Transistor (BRT) from the DTC114EET1 series, manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features maximum ratings of 50 Vdc for both collector-base (VCBO) and collector-emitter (VCEO) voltages, with a continuous collector current (IC) of 100 mAdc. The integrated resistors are specified at 22 kΩ each. It is housed in the SC-75/SOT-416 surface mount package.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network to replace discrete components
- Reduces board space and component count by combining the transistor and bias resistors
- SC-75/SOT-416 package designed for low power surface mount applications
- Modified gull-wing leads absorb thermal stress during wave or reflow soldering
Applications
- Level shifting between 12 or 24 Volt circuits and logic levels
- Open collector inverter configurations
- Unregulated current source circuits
Procurement Notes
Verify the specific ordering suffix when sourcing this component. The 'G' suffix indicates a Pb-Free package variant, while the standard version may differ in environmental compliance. Confirm the exact part number against the manufacturer's current datasheet to ensure compatibility with your assembly process and regulatory requirements.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The 22 kΩ internal resistors define the input impedance and drive characteristics. Ensure the application voltage does not exceed the 50 Vdc breakdown limits and that the thermal dissipation requirements fit within the SC-75 package constraints.
Part Context
This device belongs to the DTC114EET1 series of Bias Resistor Transistors. Other members in this series include the DTC114EET1, DTC144EET1, and DTC123EET1, which feature different resistor values but share the same NPN transistor structure and SC-75/SOT-416 packaging format.
Replacement Considerations
Direct substitutes within the same series include the DTC124EET1G (Pb-Free version). For functional replacement, other NPN BRTs in the SC-75 package with similar 22 kΩ resistor networks should be evaluated based on electrical parameter matching.
