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The DTC124ESATP is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors. It operates with a supply voltage of up to 50V and supports a continuous collector current of 100mA. The device utilizes thin-film resistors for R1 and R2, both typically rated at 22kΩ, providing a resistance ratio of approximately 1. Key electrical characteristics include a minimum DC current gain (hFE) of 56 at 5mA and 5V, and a transition frequency of 250MHz. Power dissipation is limited to 150mW, with an operating junction temperature range from -55°C to +150°C.
Verify the specific suffix 'TP' against official documentation to confirm packaging details and reel specifications. Ensure compatibility with surface mount assembly processes. Confirm RoHS compliance status through the manufacturer's latest certification documents before finalizing procurement orders.
Select this component when a compact NPN solution with integrated biasing is required for signal inversion or switching. The 22kΩ internal resistors suit standard logic interface levels. Consider the 150mW power dissipation limit and SOT-723 package dimensions during PCB layout planning.
This part belongs to the DTC124E series of digital transistors, which includes variants like DTC124EM, DTC124EE, and DTC124EKA. These devices share the same core NPN epitaxial planar silicon structure and functional specifications but differ in packaging types such as UMT3, EMT3, and SMT3.
Direct substitutes within the same family include DTC124EM, DTC124EE, and DTC124EUA. Verify pinout compatibility and package dimensions (SOT-723 vs others) before substitution. Other manufacturers may offer equivalent parts, but electrical parameters must be cross-referenced carefully.