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The DTC124GU3HZGT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It integrates bias resistors with typical values of 22 kOhms for both input and emitter-base connections. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, continuous collector current of 100 mA, and power dissipation of 200 mW. The device features a minimum DC current gain (hFE) of 56 at 5 mA and 5 V, with a maximum operating frequency of 250 MHz. It supports a maximum operating temperature of +150°C and an emitter-base voltage (VEBO) of 5 V.
Verify component authenticity against official ROHM Semiconductor documentation prior to integration. Confirm that the specific suffix matches the required electrical characteristics and packaging configuration. Ensure compliance with RoHS directives and check for any obsolescence notices or lifecycle status updates from the manufacturer before finalizing procurement plans.
Select this component when a single NPN digital transistor with 22 kOhm integrated bias resistors is required. Ensure the application voltage does not exceed 50 V and current remains within 100 mA limits. Consider the SOT-323-3 footprint constraints and thermal dissipation capabilities relative to the system's power budget and ambient temperature conditions.
This part belongs to ROHM's DTC124 series of bias resistor built-in transistors. It serves as the NPN counterpart to PNP variants like the DTA124 series. The series is designed for general-purpose switching and logic interface applications, offering a compact solution for replacing multiple discrete components with a single integrated device.
The DTC124EU3HZGT106 is listed as a similar level replacement with the same pinout and package. Verify electrical parameter compatibility, particularly regarding hFE ranges and voltage ratings, before substituting.