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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：22 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：68 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTC124XE3HZGTL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It integrates bias resistors with typical values of R1 = 22 kΩ and R2 = 47 kΩ, forming a leak absorption type configuration. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a DC current gain (hFE) minimum of 68 at 5 mA/5 V. The device supports a transition frequency (fT) of 250 MHz, operates up to +150°C junction temperature, and dissipates 150 mW of power.
Feature Summary
- Integrates built-in biasing resistors to simplify circuit design and reduce component count.
- Leak absorption type configuration provides stable operation for automotive applications.
- Qualified to AEC-Q101 standards for high reliability in automotive environments.
Applications
- Automotive interface circuits
- Inverter driver stages
- General-purpose digital switching
Procurement Notes
Verify the specific suffix '3HZGTL' against the manufacturer's datasheet to confirm the exact resistor ratio and packaging format. Ensure the ordering quantity aligns with the standard reel size of 3000 units if full reels are required. Confirm RoHS compliance status through official documentation before finalizing procurement specifications.
Selection Notes
Select this component when a single NPN digital transistor with leak absorption characteristics is required for automotive-grade designs. Compare the 22kΩ/47kΩ resistor ratio against other variants like DTC124EE3TL or DTC124XEFRATL to ensure compatibility with existing pull-up/pull-down requirements. Verify that the 50V rating and 100mA current capacity meet the load specifications.
Part Context
This part belongs to the ROHM DTC124 series of Bias Resistor Built-in Transistors (BRBTs). The series offers various configurations including potential divider and leak absorption types in packages such as SOT-416 and SOT-323. The DTC124XE3HZGTL specifically targets automotive markets with its AEC-Q101 qualification and long-term supply availability plans.
Replacement Considerations
Direct pin-compatible substitutes within the same package include DTC124XEFRATL and DTC124EU3HZGT106. Verify that the alternative part maintains the same NPN polarity, 50V rating, and similar resistor ratios to ensure functional equivalence without redesigning the surrounding circuitry.
