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The DTC124XET1G is a PNP silicon surface-mount digital transistor featuring a monolithic bias resistor network. It integrates a single transistor with two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device provides an input resistance of 22 kΩ and an emitter-base resistance of 47 kΩ. It supports a maximum collector current of -0.1 A and a supply voltage of -50 V. Power dissipation is rated at 0.15 W, with a storage temperature range from -55°C to 150°C. The component utilizes the SC-75/SOT-416 package.
Verify the specific suffix against official onsemi documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with automotive or industrial standards if required by the target application. Cross-reference the datasheet revision date to validate parameter accuracy before finalizing procurement orders.
Select this component when a compact PNP solution with integrated biasing is required. The fixed 22kΩ/47kΩ resistor ratio suits standard logic interface levels. Consider thermal management capabilities given the 0.15W power dissipation limit in the small SOT-416 package during high-frequency switching operations.
This part belongs to onsemi's Bias Resistor Transistor (BRT) family, designed to replace discrete transistor-resistor networks. It serves as a direct replacement for similar BRT devices offering identical electrical characteristics and pinout configurations within the same package footprint.
Compatible substitutes include DTA124XE variants with matching R1/R2 ratios. Verify pinout compatibility and thermal performance when substituting with equivalent parts from other manufacturers.