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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：4.7 kOhms
- Resistor - Emitter Base (R2)：4.7 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：15 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC143EET1 is an NPN silicon Bias Resistor Transistor (BRT) from the DTC114EET1 series, manufactured by onsemi. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features R1 and R2 values of 4.7 kΩ each. It is housed in the SC-75/SOT-416 surface-mount package designed for low power applications. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 Vdc, a collector current (IC) of 100 mAdc, and a total device dissipation of 200 mW on an FR-4 board at 25°C. The junction temperature range is -55 to +150 °C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor to replace discrete components.
- Reduces system cost and board space by eliminating individual external biasing resistors.
- Features modified gull-wing leads in the SC-75/SOT-416 package to absorb thermal stress during wave or reflow soldering.
Applications
- Level shifting circuits connecting 12 or 24 Volt systems to logic levels
- Open collector inverter configurations for signal inversion
- Unregulated current source implementations
Procurement Notes
Verify the specific ordering suffix to confirm packaging details. The standard DTC143EET1 variant ships in tape and reel format with a quantity of 3000 units. Ensure compatibility with Pb-free manufacturing processes if required by the design specifications.
Selection Notes
Select this component when a compact NPN switching solution with integrated biasing is required. The 4.7 kΩ internal resistor values are suitable for specific drive conditions. Verify that the 50 V collector-emitter voltage rating meets the circuit requirements.
Part Context
This part belongs to the DTC114EET1 series of Bias Resistor Transistors. The series includes various combinations of internal resistors and transistor types. The DTC143EET1 specifically utilizes equal 4.7 kΩ resistors for both the base series and base-emitter paths within the SOT-416 footprint.
Replacement Considerations
Compatible substitutes within the same series include DTC143EET1G, which denotes a Pb-free package variant. Other series members like DTC114EET1 or DTC124EET1 offer different resistor ratios and should be evaluated based on specific biasing needs.
