DTC143EUBTL

$0.15

Description：TRANS PREBIAS NPN 50V UMT3F
Series：-

SKU:87cbd5cf7b70 Category: Single, Pre-Biased Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS NPN 50V UMT3F
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：NPN - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：4.7 kOhms
Resistor - Emitter Base (R2)：4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：250 MHz
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-85
Supplier Device Package：UMT3F

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DTC143EUBTL

Overview

The DTC143EUBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in biasing resistors to simplify circuit design. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. The device includes an internal base resistor (R1) and emitter-base resistor (R2), both typically valued at 4.7 kOhms, resulting in a resistance ratio of 1. Key electrical specifications include a minimum DC current gain (hFE) of 30 at 10 mA and 5 V, a transition frequency of 250 MHz, and a maximum power dissipation of 200 mW. It is housed in a UMT3F (SOT-323FL) surface-mount package.

Feature Summary

Integrates pre-biased resistors to eliminate external input components
Enables simple on/off control for inverter circuits
Provides high-speed switching capability

Applications

General-purpose digital logic interface circuits
Driver circuits for small-signal loads
Level shifting between different voltage domains

Procurement Notes

Verify the specific ordering suffix against the manufacturer's datasheet to confirm pinout and electrical tolerances. Ensure the component meets RoHS3 compliance requirements for your assembly process. Confirm that the UMT3F package dimensions align with your PCB footprint constraints before finalizing procurement.

Selection Notes

Select this component when a compact NPN solution with integrated biasing is required for low-power switching applications. Consider the 50 V breakdown voltage and 100 mA current limit to ensure adequate headroom for the target load. Verify that the 200 mW power dissipation rating is sufficient for the expected operating temperature range.

Part Context

This part belongs to the DTC143 series of digital transistors from ROHM Semiconductor. It is designed as a drop-in replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The UMT3F package offers a small form factor suitable for dense consumer electronics layouts.