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The DTC143TET1G is an NPN digital transistor (BRT) from onsemi, housed in the SC-75 package. It integrates a single transistor with a monolithic bias resistor network consisting of a series base resistor (R1 = 4.7 kΩ) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and DC current gain (hFE) ranging from 160 to 350 at IC = 5.0 mA. The device operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix 'TET1G' against the manufacturer's official documentation to confirm the SC-75 package and tape & reel shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet before procurement.
Select this component when a compact NPN switching solution with integrated biasing is required. Consider the 50 V collector-emitter voltage rating and 100 mA continuous current limit. Verify that the SC-75 package dimensions fit the available PCB real estate compared to alternatives like SOT-23 or SOT-723.
This part belongs to the DTC143TE series of Bias Resistor Transistors (BRTs), which also includes variants such as MUN2216 and DTC143TM3. These devices share the same internal circuit topology but differ in packaging options like SC-59, SOT-23, and SOT-723 to suit various assembly needs.
Direct substitutes include other BRTs with identical R1/R2 values and NPN polarity, such as the MUN2216T1G (SC-59) or MMUN2216LT1G (SOT-23), provided the package footprint allows for adaptation. Verify pinout compatibility if changing packages.
The device contains a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2).
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
No, it is designed for low-power surface mount applications with a maximum power dissipation of approximately 200 mW at 25°C, not for high-power audio amplification.