DTC143TET1G

DTC143TET1G

$0.15
  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-

SKU:590d50b6835d Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A SC75
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:SC-75, SOT-416

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DTC143TET1G

Overview

The DTC143TET1G is an NPN digital transistor (BRT) from onsemi, housed in the SC-75 package. It integrates a single transistor with a monolithic bias resistor network consisting of a series base resistor (R1 = 4.7 kΩ) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 Vdc, continuous collector current (IC) of 100 mAdc, and DC current gain (hFE) ranging from 160 to 350 at IC = 5.0 mA. The device operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias resistor network to replace discrete components.
  • Reduces board space and component count by eliminating external resistors.
  • Simplifies circuit design for switching applications.

Applications

  • Inverter circuits
  • Interface drivers
  • General-purpose switching

Procurement Notes

Verify the specific ordering suffix 'TET1G' against the manufacturer's official documentation to confirm the SC-75 package and tape & reel shipping configuration. Ensure compliance with RoHS standards and lead-free requirements as specified in the datasheet before procurement.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. Consider the 50 V collector-emitter voltage rating and 100 mA continuous current limit. Verify that the SC-75 package dimensions fit the available PCB real estate compared to alternatives like SOT-23 or SOT-723.

Part Context

This part belongs to the DTC143TE series of Bias Resistor Transistors (BRTs), which also includes variants such as MUN2216 and DTC143TM3. These devices share the same internal circuit topology but differ in packaging options like SC-59, SOT-23, and SOT-723 to suit various assembly needs.

Replacement Considerations

Direct substitutes include other BRTs with identical R1/R2 values and NPN polarity, such as the MUN2216T1G (SC-59) or MMUN2216LT1G (SOT-23), provided the package footprint allows for adaptation. Verify pinout compatibility if changing packages.

FAQ

What are the internal resistor values for the DTC143TET1G?

The device contains a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2).

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is 50 Vdc.

Is the DTC143TET1G suitable for high-power audio amplification?

No, it is designed for low-power surface mount applications with a maximum power dissipation of approximately 200 mW at 25°C, not for high-power audio amplification.

DTC143TET1GDTC143TET1G
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