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The DTA143TM3T5G is a Bias Resistor Transistor (BRT) manufactured by onsemi, featuring an NPN transistor integrated with a monolithic bias resistor network. It replaces discrete components to simplify circuit design and reduce board space. The device operates with a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Key electrical parameters include a typical DC current gain (hFE) of 350 at IC=5.0 mA and VCE=10 V, and a minimum hFE of 160. The input resistor R1 has a typical value of 4.7 kOhms. Total power dissipation is rated at 260 mW at 25°C ambient temperature. The component is housed in a SOT-723 surface-mount package.
Verify the specific ordering suffix T5G corresponds to the SOT-723 package and tape-and-reel shipping configuration containing 8000 units per reel. Confirm that the device marking matches the datasheet diagram for the DTC143TM3 series. Ensure compliance requirements such as Pb-free status are documented for the specific manufacturing lot prior to integration into production assemblies.
Select this component when a compact NPN digital transistor solution is required for low-voltage switching applications. The integrated 4.7 kOhm base resistor simplifies drive circuit calculations. Verify that the 50 V collector-emitter breakdown voltage meets the system's maximum operating voltage constraints. Consider the SOT-723 package dimensions for PCB layout compatibility and thermal dissipation requirements under expected load conditions.
This part belongs to the DTC143TM3 series within onsemi's portfolio of Bias Resistor Transistors. The series includes various packages such as SC-59, SOT-23, and SC-70. The TM3 designation specifically identifies the SOT-723 variant. This family is designed to streamline the implementation of digital logic interfaces by consolidating transistor and resistor functions into a single semiconductor die.
Direct pin-compatible replacements within the same series include other DTC143 variants in different packages, though physical footprint changes must be accounted for. Cross-reference with MUN2216 or MMUN2216L if NPN characteristics and similar resistor values are acceptable, noting potential differences in package style and thermal performance.
The device contains a monolithic bias network comprising a series base resistor (R1) and a base-emitter resistor (R2). These resistors eliminate the need for external discrete components typically used to bias a standard BJT.
The typical value for the input resistor R1 is 4.7 kOhms, with a specified range from 3.3 kOhms to 6.1 kOhms.
While the general DTC143 series notes indicate that devices with 'S' and 'NSV' prefixes are AEC-Q101 qualified and PPAP capable for automotive use, the specific DTA143TM3T5G part number does not explicitly carry these prefixes in the provided documentation. Verification of automotive qualification status is recommended.