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The DTC143XEBHZGTL is an NPN digital transistor manufactured by ROHM Semiconductor, designed for surface-mount applications in the EMT3F (SOT-416FL) package. It integrates bias resistors with a base resistance (R1) of 4.7 kOhms and an emitter-base resistance (R2) of 10 kOhms. The device supports a collector continuous current of 100 mA and a maximum operating frequency of 250 MHz. Key electrical limits include a collector-emitter voltage (VCEO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and power dissipation of 150 mW. It meets AEC-Q101 automotive grade standards and operates within a temperature range up to +150°C.
Verify the specific suffix configuration against the official datasheet to ensure compatibility with the intended PCB footprint and electrical requirements. Confirm that the EMT3F package dimensions align with the assembly design rules. Check for any obsolescence notices or lifecycle status updates from the manufacturer before finalizing procurement plans.
Select this component when a single NPN digital transistor with R1=4.7kΩ and R2=10kΩ is required in a SOT-416FL form factor. Ensure the application demands a minimum hFE of 30 at 10mA/5V and can accommodate the 150mW power dissipation limit. Verify that the 50V VCEO rating exceeds the maximum circuit voltage spikes.
This part belongs to the DTC143 series of bias resistor built-in transistors from ROHM. It is specifically engineered for automotive environments, distinguishing it from standard commercial-grade counterparts through rigorous qualification processes. The EMT3F package provides a compact solution for space-constrained designs requiring integrated logic-level driving capabilities.
DTC143XEFRATL is listed as a substitute option by distributors.