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The DTC143ZM3T5G is a Bias Resistor Transistor (BRT) featuring an NPN transistor with a monolithic bias resistor network. It integrates a series base resistor (R1 = 4.7 kΩ) and a base-emitter resistor (R2 = 47 kΩ). The device supports a maximum collector-emitter voltage of 50 Vdc and continuous collector current of 100 mAdc. Power dissipation reaches 260 mW at 25°C, derating to 2.0 mW/°C above this temperature. Operating junction temperatures range from -55°C to +150°C. The component utilizes the SOT-723 package.
Verify the specific ordering suffix T5G corresponds to the SOT-723 package and tape-and-reel shipping configuration. Confirm RoHS compliance and Pb-free status requirements against project specifications. Ensure the manufacturer part number matches the exact datasheet revision for accurate electrical parameter validation before finalizing procurement orders.
Select this component when a compact NPN digital transistor solution is required for logic inversion or switching tasks. The integrated 4.7 kΩ base resistor simplifies drive circuit design compared to discrete transistors. Verify that the 50 V collector-emitter breakdown voltage meets the system's maximum operating voltage constraints.
This device belongs to the DTC143Z series of digital transistors manufactured by onsemi. It is functionally equivalent to other variants within the same family, such as the DTC143ZE, though packaging differs. The product line is designed to simplify circuit design by combining transistor and bias resistor functions into a single surface-mount device.
DTC143ZE serves as a direct functional alternative within the same series, offering identical electrical characteristics but utilizing the SC-75 package instead of SOT-723. Designers must verify pinout compatibility and physical footprint differences when substituting between these package styles.