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The DTC144EM3T5G is an NPN Bias Resistor Transistor (BRT) featuring a monolithic bias network with R1 and R2 both at 47 kΩ. It operates within a collector-emitter voltage of 50 Vdc and supports continuous collector current up to 100 mAdc. The device delivers a DC current gain (hFE) ranging from 80 to 140 at 5.0 mA and 10 V. Power dissipation reaches 260 mW at 25°C, derating by 2.0 mW/°C above this threshold. Thermal resistance from junction to ambient is 480 °C/W under minimum pad conditions. Operating and storage temperatures span from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's current distribution list to confirm availability status. Confirm that the SOT-723 package dimensions align with the target footprint requirements. Ensure compliance with RoHS directives and lead-free manufacturing standards required for the assembly process. Validate that the thermal characteristics meet the system's heat dissipation constraints during operation.
Select this component when a compact NPN solution with integrated base biasing is required. The 47 kΩ internal resistor ratio suits standard logic interface applications. Consider the 50 V breakdown voltage for low-voltage signal processing tasks. Evaluate the SOT-723 package size against available board real estate constraints compared to larger transistor packages.
This part belongs to the DTC144E series of digital transistors manufactured by onsemi. It shares functional similarities with other BRT devices like MUN2213 but differs in internal resistor values and packaging. The EM3 suffix indicates a Pb-Free, RoHS-compliant variant packaged in SOT-723 tape and reel format for automated surface-mount assembly.
NSVDTC144EM3T5G serves as a qualified automotive-grade alternative within the same family. Verify pinout compatibility and electrical parameter equivalence before substitution. Check for any changes in marking codes or shipping configurations associated with the prefix change.