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The DTC144TET1G is an NPN bipolar digital transistor (BRT) manufactured by onsemi, designed to replace discrete transistors and external bias networks. It integrates a single NPN transistor with a monolithic bias resistor network consisting of one series base resistor (R1). Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (Pd) of 200 mW. The typical input resistance R1 is 47 kOhms. The device features a minimum DC current gain (hFE) of 120 at IC=5mA and VCE=10V. It operates within a temperature range of -55°C to +150°C and is housed in the SC-75 (SOT-416) surface-mount package.
Verify the specific ordering suffix ET1G to confirm the SC-75/SOT-416 package and reel packaging configuration. Ensure compatibility with RoHS3 standards if required by the target application. Confirm that the 200 mW power dissipation rating aligns with the thermal management capabilities of the final assembly environment.
Select this component when a compact NPN solution with integrated base biasing is required. The 47 kOhm internal resistor value suits standard logic interface applications. Consider the 50 V breakdown voltage for low-voltage signal processing tasks. Verify that the SOT-416 footprint fits the available board real estate compared to larger packages like SOT-23.
This part belongs to the DTC144 series of digital transistors from onsemi. It shares functional similarities with other BRT devices but is distinguished by its specific resistor configuration and SC-75 packaging. It serves as a direct replacement for discrete NPN transistor and resistor combinations in space-constrained designs.
Direct substitutes may include other NPN BRTs with similar 50V/100mA ratings and 47kOhm base resistance, such as parts from the DTC143 or DTC144 families in compatible packages. Verify pinout compatibility and thermal characteristics before substitution.