SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTC144WET1G is a Bias Resistor Transistor (BRT) featuring a single NPN transistor integrated with a monolithic bias resistor network. It includes a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 22 kΩ, yielding a typical resistor ratio of 2.1. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 50 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW in the SC-75 package.
Verify the specific ordering suffix 'ET1G' corresponds to the SC-75 package and tape-and-reel shipping configuration. Confirm that the part marking '8P' matches the required identification for assembly traceability. Ensure compliance with RoHS standards and Pb-Free packaging requirements as specified in the manufacturer's documentation.
Select this component when a compact NPN solution with fixed biasing is required. The 47 kΩ input resistance suits standard logic drive levels. Verify thermal dissipation limits against the application's ambient temperature and pad layout constraints to ensure operation remains within the specified derating curve.
This device belongs to the DTC144WE series of digital transistors manufactured by onsemi. It is designed to simplify circuit design by eliminating external bias resistors. The product is available in multiple packages, with the ET1G suffix specifically denoting the SC-75 form factor.
Direct functional equivalents include DTC144WM3T5G and NSVDTC144WET1G. Note that these alternatives utilize different packages such as SOT-723 or require verification of pin compatibility if substituting across package types.
The device contains a series base resistor (R1) of 47 kΩ and a base-emitter resistor (R2) of 22 kΩ.
The continuous collector current rating is 100 mA.
Yes, versions with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive use.